agr21 125e 125 w , 2. 1 10 ghz ?2.17 0 ghz, n-channe l e-m ode, la teral mosfet introdu ction t he ag r21 125e i s a hi gh- v o l t age, gol d- me t a li z ed, en hanc em ent mod e , l a te r a ll y d i f f us ed met a l o x i de s e mi co ndu cto r ( l dmo s ) r f powe r tr a n s i s t or s u i t - a b l e f o r w i de b a n d co de di vi si on mu l t ip le acce ss ( w - cdma ) , s i n g l e a nd mu lti c a r r i er c l as s ab wir e l e s s ba se st a t io n po wer am pli f i e r app li ca tio n s . figur e 1 . a v a ila ble p a c k a ge s featu res t y pi cal pe r f or man c e for two c a r r i e r 3g p p w - cdma s y s t em s. f 1 = 213 5 m h z and f 2 = 21 45 m h z with 3.8 4 mh z c h a nne l b w , ad ja - ce nt c h a nne l b w = 3 . 84 mhz at f 1 ? 5 mhz an d f 2 + 5 m h z . t h i r d - o r d e r di sto r tion is m eas ur ed ov er 3.8 4 m h z b w at f 1 ? 1 0 mh z a nd f 2 + 10 mhz . t y pi c a l p/a r a ti o of 8.5 db at 0 . 01% ( p robab il ity ) ccdf: ? o u t put powe r : 28 w . ? p o we r gai n: 1 4 db . ? ef f i ci en cy : 2 7 % . ? i m 3: ?34. 5 db c . ? ac pr : ?38 d b c. ? re tur n l o s s : ?10 db . hig h - r e l i abi li ty , gol d- me t a li z a ti on p r o c e s s . low hot ca r r i e r in jec t i on ( hci ) i n d u ce d b i as dr i f t ov er 20 ye ar s. inte r n al ly ma tc h ed. hig h ga in , ef fic i enc y , and li nea r i ty . inte gr ated e s d p r o t ec tio n . dev i c e can wi ths t and a 1 0 :1 vo lt a ge s t an din g wa ve r a tio ( v s w r ) a t 28 vd c, 214 0 m h z , 1 25 w c o n t in - uou s w a v e ( c w ) o u tp ut po wer . lar ge s i gn al imp eda nc e p a r a mete r s a v a i l abl e. t a b l e 1. t h e r m al ch a r ac t e ris t ic s t a ble 2 . abs o l u te m a x i mum ra tings * * s t ress e s i n exc e ss of t he absolut e m a xim u m rat i ngs ca n caus e perm anent dam age t o t he device. t h e s e are absolut e st r e ss rat - ings only . f unct i o nal operat ion of t he device i s not im pli ed at t hese or any ot her condit i ons in e xcess of t hose given in t he operat ional se ct ions of t he dat a sheet . expos ure t o absolut e m a ximum rat i ngs f o r ext ended periods can advers e l y af f e c t devic e reliabili t y . t a b l e 3. e s d rat i n g * * alt hough el ec t ros t a t i c di s c harge (e sd) prot ect i on circ ui t r y has been designed i n t o t h is device, pr oper p recaut i o ns m u st be t a ken t o avoid ex posure t o e s d and elec t r ical overs t res s (eo s) during all handling, asse mbly , and t e st operat ions. ag ere em pl oy s a hum an-body m odel (hb m), a m a chine m odel ( mm ), and a c harged-dev i c e m odel (c dm) qualif icat ion requ i r ement in order t o det erm i ne es d-sus cept ibi lit y limit s and pr ot ect i on design ev aluat ion. es d volt ag e t h res holds are depe ndent on t he circ ui t p a ramet e rs used in eac h of t he models, as def ined by je dec's je sd22- a1 14b (h bm) , jes d 22-a 1 15a (m m), and je sd22- c101a (cdm ) s t anda rds. cau ti o n : m o s d evi ces are su scep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p ackag i n g mo s d evi ces sh o u l d b e o b se r v ed . ag r2 1 1 2 5 e u (u nfla nge d ) ag r2 1 1 2 5 ef (fla n ge d) 7 48 5 pa ra m e te r s y m v a l u e u ni t the r m a l r e si st a n c e , j u n c ti on to ca s e : a g r21 1 25e u a g r21 1 25e f r ? jc r ? jc 0. 5 0. 5 c / w c / w pa ra m e te r s y m v a l u e u ni t d r a i n- s our c e v o lt a g e v ds s 65 v d c g a t e - s ou r c e v o l t a g e v gs ?0. 5, +15 v dc t o t a l d i ssi p a t i on at t c = 2 5 c : ag r21 1 25e u ag r21 1 25e f p d p d 350 350 w w der a te a bov e 25 c: ag r21 1 25e u ag r21 1 25e f ? ? 2. 0 2. 0 w/ c w/ c o p er ati ng ju nc tio n t e m per a- tur e t j 200 c s t or ag e t e m p er at u r e r a ng e t st g ?6 5, +1 50 c ag r21 1 2 5 e m inimum ( v ) c la ss hbm 500 1 b mm 50 a cdm 150 0 4 peak devices
125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21125E electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2135.0 mhz, and f2 = 2145 mhz. v dd = 28 vdc, i dq = 1200 ma, and p out = 28 w avg. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 200 a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ? ? 4 adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ? ? 12 adc on characteristics forward transconductance (v ds = 10 v, i d = 1 a) g fs ?9? s gate threshold voltage (v ds =10v, i d = 400 a) v gs(th) ? ? 4.8 vdc gate quiescent voltage (v ds = 28 v, i d = 1200 ma) v gs(q) ? 3.8 ? vdc drain-source on-voltage (v gs =10v, i d = 1 a) v ds(on) ? 0.08 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 3.0 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps 12 14 ? db drain efficiency* 25 27 ? % third-order intermodulation distortion* (imd3 measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?34.5 ?33 dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?38 ?37 dbc input return loss* irl ? ?10 ?9 db power output, 1 db compression point (v dd = 28 v, f c = 2140.0 mhz) p 1db 115 125 ? w output mismatch stress (v dd = 28 v, p out = 125 w (cw), i dq = 1200 ma, f c = 2140.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 400 200 (in supplied test fixture)
AGR21125E 125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR21125E a. schematic b. component layout figure 2. AGR21125E test circuit parts list: microstrip line: z1 0.785 in. x 0.065 in. z2 0.205 in. x 0.065 in. z3 0.070 in. x 0.255 in. z4 0.315 in. x 0.065 in. z5 0.240 in. x 0.860 in. z6 0.050 in. x 0.467 in. z7 0.050 in. x 0.367 in. z8 0.500 in. x 1.050 in. z9 0.248 in. x 0.185 in. z10 0.075 in. x 0.320 in. z11 0.465 in. x 0.115 in. z12 0.075 in. x 0.065 in. z13 0.252 in. x 0.065 in. z14 0.050 in. x 0.367 in. wb1, wb2; 10 mil thick, 0.6 in. x 0.18 in. fair-rite ? ferrite bead: fb1 2743019447. vitramon ? 1206 size chip capacitor: c3, c9a, c9b, c9c, c9d 22000 pf. 1206 size chip capacitor: 22000 pf c12a, c12b, c12c, c12d, c13a, c13b. 1206 size chip resistor: r1 1 k ? ; r2 560 k ? ; r3 4.7 ? . taconic ? orcer rf-35 board material, 2 oz. copper, 30 mil thickness, r = 3.5. atc ? chip capacitor: c1 10 pf 100b100jw500x; c5, c14a, c14b, c15a, c15b 5.6 pf100b5r6bw500x; c6a, c6b 6.8 pf 100b6r8jw500x; c7a, c7b 1.2 pf 100b1r2bw500x; c16 15 pf 100b150jw500x. murata ? 0805 size chip capacitor: c8a, c8b, c8c, c8d 0.01 f grm40x7r103k100al. sprague ? tantalum surface-mount chip capacitor: c2, c4, c10a, c10b, c11a, c11b 22 f, t491, 35 v. johanson giga-trim ? variable capacitor: c18 0.6 pf to 4.5 pf 27271sl. dut r3 c2 r2 r1 + c3 c4 + c5 fb1 z6 z1 c1 z2 z3 z4 z5 z8 z9 z10 z11 z12 z13 c9ac8ac7ac6a c13a c12a c11a + c10a c14a rf input v gg v dd rf c16 c15a c18 output + 1 2 3 c9bc8b c7b c6b c13b c12b c11b + c10b c14b c15b + c12d c9d c8d z7 c12c c9c c8c v dd pins: 1. drain, 2. gate, 3. source z14 231
125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21125E typical performance characteristics figure 3. series equivalent input and output impedances mhz (f ) z s ? ( complex source impedance ) z l ? (complex optimum load impedance) 2110 (f1) 3.8 ? j8.7 1.4 + j0.7 2140 (f2) 3.4 ? j8.2 1.4 + j0.8 2170 (f3) 3.3 ? j7.7 1.3 + j0.9 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z l f3 f1 z s f3 f1 z 0 = 10 ? dut z s z l input match output match drain (1) source (3) gate (2)
AGR21125E 125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) figure 4. two-tone power gain vs. output power and i dq figure 5. imd3 vs. output power and i dq 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 1 10 100 1000 output power (w) pep power gain (db) s v dd = 28 vdc f1 = 2135 mhz f2 = 2145 mhz two-tone measurement i dq = 800 ma i dq = 1000 ma i dq = 1200 ma i dq = 1400 ma i dq = 1600 ma 10 mhz tone spacing -70.00 -65.00 -60.00 -55.00 -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 1 10 100 1000 output power (w) pep imd3, third order (dbc) s v dd = 28 vdc f1 = 2135 mhz f2 = 2145 mhz two-tone measurement 10 mhz tone spacing i dq = 800 ma i dq = 1000 ma i dq = 1600 ma i dq = 1400 ma i dq = 1200 ma
125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21125E typical performance characteristics (continued) figure 6. imd vs. tone spacing figure 7. gain, efficiency, imd3, and acpr vs. output power -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0.1 1 10 100 two-tone spacing (mhz) imd (dbc) im7 im5 v dd = 28 v, p out = 130 w pep, f o = 2140 mhz im3 0 2 4 6 8 10 12 14 16 18 20 15 20 25 30 35 40 output power (watts-average) s gain (db) s -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 eff (%), imd3 (dbc), acpr (dbc) s 2 carrier w-cdma 3 gpp, peak to avg. = 8.5 db @ 0.01% ccdf, 10 mhz spacing 3.84 mhz cbw, p out = 28 w, v dd = 28 v, i dq = 1200 ma drain eff gain imd3 acpr
AGR21125E 125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) figure 8. broadband performance figure 9. spectral plot 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 carrier 2.1625 ghz 5 mhz span 50 mhz 0 2 4 6 8 10 12 14 16 18 20 2100 2110 2120 2130 2140 2150 2160 2170 2180 frequency (mhz) s gain (db) s -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 eff (%), rl (db), imd3 (dbc), acpr (dbc) s 2 carrier w-cdma 3 gpp, peak to avg. = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 mhz cbw, p out = 28 w, v dd = 28 v, i dq = 1200 ma eff gain rl imd3 acpr 2 carrier w-cdma 3gpp, peak-to-avg = 8.5 db @ 0.01% ccdf 10 mhz spacing, 3.84 mhz cbw, p out = 28 w, v dd = 28 v, idq = 1200 ma f1 f2 imd3 imd3 acpr acpr
125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21125E typical performance characteristics (continued) figure 10. am-am and am-pm characteristics 12 12.5 13 13.5 14 14.5 0 10 20 30 40 50 input power pin (dbm) power gain (db) -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 phase (degrees) am-am (power gain [db]) am-pm (phase [degrees]) v dd = 28 vdc f o = 2140 mhz i dq = 1200 ma cw input
AGR21125E 125 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. cut lead indicates drain. AGR21125Eu AGR21125Ef label notes: m before the part number denotes model program. x before the part number denotes engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of manufacture: year year work week (yyww), ll = location (al = allentown, pa; bk = ban gkok, thailand). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. pins: 1. drain 2. gate 3. source pins: 1. drain 2. gate 3. source m - agr 2 1 1 2 5 u yywwur zzzzzzz peak devices agr21125xu yywwur xxxxx zzzzzzz 1 2 3 1 2 3 agere m-agr21125f yywwur zzzzzzz 1 3 2 peak devices agr21125xf yywwur xxxxx zzzzzzz 1 2 3
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